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| AJT006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG 4x .062 x 45 A .040 x 45 C DESCRIPTION: D 2xB OE F G H I J K L R N DIM A B C D E F G H I J .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00 MINIMUM inches / mm The ASI AJT006 is Designed for FEATURES: * Input Matching Network * * OmnigoldTM Metalization System M P MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .105 / 2.67 .120 / 3.05 .306 / 7.77 .130 / 3.30 .318 / 8.08 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O 0.9 A 32V 25 W @ TC 75 C O O O .572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84 K L M N P R -65 C to +250 C -65 C to +200 C 7.0 OC/W O ORDER CODE: ASI10544 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG C IC = 1 mA IC = 5 mA IE = 1 mA VCE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 48 48 3.5 0.5 UNITS V V V mA --dB % VCE = 5.0 V VCC = 45 V IC = 250 mA POUT = 6.0 W f = 960-1215 MHz 30 9.3 40 300 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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